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HSD965 NPN Epitaxial Planar Transistor

HSD965 is NPS Epitaxial Planar Bipolar Junction Transistor which can be very useful in various applications while used as AF output amplifier and flash unit. It features collector capacitance of 50 pF and transition frequency of 150 MHz

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Product Overview

HSD965 is NPS Epitaxial Planar Bipolar Junction Transistor which can be very useful in various applications while used as AF output amplifier and flash unit. It features collector capacitance of 50 pF and transition frequency of 150 MHz


Features

Material of Transistor
Si
Polarity
NPN
Maximum Collector Power Dissipation (Pc)
0.75 W
Maximum Collector-Base Voltage |Vcb|
40 V
Maximum Collector-Emitter Voltage |Vce|
20 V
Maximum Emitter-Base Voltage |Veb|
7 V
Maximum Collector Current |Ic max|
5 A
Max. Operating Junction Temperature (Tj)
150 °C
Transition Frequency (ft)
150 MHz
Collector Capacitance (Cc)
50 pF
Forward Current Transfer Ratio (hFE), MIN
230
Noise Figure, dB
-

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