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IRFR310 N-Channel Power MOSFET

Buy IRFR310 a N-Channel Power MOSFET, which is housed in TO-251 and TO-252 package, together with numerous other transistors at the lowest price on Nevonexpress


Available Stock : 50 Unit

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Product Overview

IRFR310 is a N-Channel Power MOSFET, which is designed for best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. This transistor features fast switching, dynamic dV/dt rating and rated for repetitive avalanche. The TO-252 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


Minimum Drain-Source Breakdown Voltage
400 V
Typical Temperature Coefficient
0.47 V/°C
Maximum Gate-Source Leakage
± 100 nA
Maximum Drain-Source On-State Resistance
3.6 Ω
Minimum Forward Transconductance
0.97 S
Maximum Body Diode Reverse Recovery Time
540 ns
Repetitive Avalanche Energy
2.5 mJ
Repetitive Avalanche Current
1.7 A
Typical Rise Time
9.9 ns
Typical Fall Time
11 ns
Maximum Total Gate Charge
12 nC
Operating Junction and Storage Temperature Range
-55 to 150 °C
Fast Switching
Fully Avalanche Rated
Dynamic dV/dt Rating

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