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IRLZ34NS N-Channel Power MOSFET

Buy IRLZ34NS a N-Channel Power MOSFET, which is housed in D2-PAK and TO-262 package, along with numerous other transistors at the lowest price on Nevonexpress

Product Overview

IRLZ34NS is a N-Channel Power MOSFET, which is designed with advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRLZ34NS transistor features Fast Switching, Logic-Level Gate Drive, Low-profile through-hole and it is fully rated for avalanche. D2-PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. It provides the highest power capability and the lowest possible On-resistance in any existing surface mount package.


Minimum Drain-to-Source Breakdown Voltage
55 V
Minimum Forward Transconductance
11 S
Maximum Total Gate Charge
25 nC
Maximum Power Dissipation
68 W
Typical Rise Time
100 ns
Typical Fall Time
29 ns
Operating Junction and Storage Temperature Range
-55 to +175 °C
Advanced Process Technology
Logic-Level Gate Drive
Low-profile through-hole

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