IRLZ34NS is a N-Channel Power MOSFET, which is designed with advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRLZ34NS transistor features Fast Switching, Logic-Level Gate Drive, Low-profile through-hole and it is fully rated for avalanche. D2-PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. It provides the highest power capability and the lowest possible On-resistance in any existing surface mount package.